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 .025" NPN Phototransistors
Clear Long T-1 (3 mm) Plastic Package
VTT3323LA, 4LA, 5LA
PACKAGE DIMENSIONS inch (mm)
CASE 50A LONG T-1 (3 mm) CHIP TYPE: 25T
PRODUCT DESCRIPTION
A small area high speed NPN silicon phototransistor mounted in a 3 mm diameter, lensed, end looking, transparent plastic package. These devices are spectrally and mechanically matched to the VTE337xLA series of IREDs.
ABSOLUTE MAXIMUM RATINGS
(@ 25C unless otherwise noted)
Maximum Temperatures Storage Temperature: Operating Temperature: Continuous Power Dissipation: Derate above 30C: Maximum Current: Lead Soldering Temperature: (1.6 mm from case, 5 sec. max.)
-40C to 100C -40C to 100C 50 mW 0.71 mW/C 25 mA 260C
ELECTRO-OPTICAL CHARACTERISTICS @ 25C (See also typical curves, pages 91-92)
Light Current lC mA Min. VTT3323LA VTT3324LA VTT3325LA 2.0 4.0 6.0 Max. -- -- -- H fc (mW/cm2) VCE = 5.0 V 20 (1) 20 (1) 20 (1) Dark Current lCEO H=0 (nA) Max. 100 100 100 VCE (Volts) 10 10 10 Collector Breakdown VBR(CEO) lC = 100 A H=0 Volts, Min. 30 30 30 Emitter Breakdown VBR(ECO) lE = 100 A H=0 Volts, Min. 5.0 5.0 5.0 Saturation Voltage VCE(SAT) lC = 1.0 mA H = 400 fc Volts, Max. 0.25 0.25 0.25 Rise/Fall Time tR/tF lC = 1.0 mA RL = 100 sec, Typ. 3.0 4.0 5.0 Angular Response 1/2
Part Number
Typ. 10 10 10
Refer to General Product Notes, page 2.
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA
Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
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